Back-Gate Network Extraction Free from Dynamic Self-Heating in FD SOI

被引：0

作者：

Nyssens, Lucas ^{[1
]}

Rack, Martin ^{[1
]}

Halder, Arka ^{[1
]}

Vanbrabant, Martin ^{[1
]}

Kilchytska, Valeriya ^{[1
]}

Raskin, Jean-Pierre ^{[1
]}

机构：

[1] Catholic Univ Louvain, Inst Informat & Commun Technol, Elect & Appl Math, Louvain La Neuve, Belgium

来源：

2021 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA) | 2021年

关键词：

PARAMETER-EXTRACTION; TRANSISTORS; OPERATION;

D O I：

10.1109/VLSI-TSA51926.2021.9440125

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Back-gate and substrate networks modeling of FD SOI MOSFETs is crucial for RF and mm-wave applications due to their impact on RF performance. However, usual substrate models rely on the source to drain coupling through the back-gate, which appears in the same frequency range as the dynamic self-heating effect in such devices. This paper provides equations enabling dynamic self-heating removal from measurements to obtain isothermal Y-parameters, based on the knowledge of the frequency-dependent complex thermal impedance. This work shows that a large error on the back-gate related small-signal equivalent circuit, as well as on the output conductance, can be made if they are extracted without removal of dynamic self-heating.

引用

页数：2

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