Coherent control of stress-induced InGaAs quantum dots by means of phonon-assisted resonant photoluminescence

被引：0
|
作者：
Baranov, AV
Davydov, V
Fedorov, AV
Ren, HW
Sugou, S
Masumoto, Y
机构：
[1] Japan Sci & Technol Corp, Single Quantum Dot Project, ERATO, Tsukuba, Ibaraki 30002635, Japan
[2] SI Vavilov State Opt Inst, St Petersburg 199034, Russia
[3] Univ Tsukuba, Venture Business Lab, Tsukuba, Ibaraki 3058573, Japan
[4] NEC Corp Ltd, Optoelect Res lab, Tsukuba, Ibaraki 3058501, Japan
[5] Univ Tsukuba, Inst Phys, Tsukuba, Ibaraki 3058571, Japan
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2001年 / 224卷 / 02期
关键词：
D O I：
10.1002/1521-3951(200103)224:2<461::AID-PSSB461>3.0.CO;2-V
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We report the control of coherent status of the lowest energy electronic state of InGaAs/GaAs stress-induced quantum dots in an inhomogeneously broadened system by time-integrated detection of narrow Raman-like lines in resonant photoluminescence spectra. The dephasing time of 18.5 ps has been found at 2K.
引用
收藏
页码：461 / 464
页数：4
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