Phonon-assisted energy transfer from barrier states into quantum dots

被引：0

作者：

Rodt, S ^{[1
]}

Türck, V ^{[1
]}

Heitz, R ^{[1
]}

Strassburg, M ^{[1
]}

Pohl, UW ^{[1
]}

Bimberg, D ^{[1
]}

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

来源：

PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Interactions of semiconductor quantum dots (QD's) with their nano-environment can significantly alter their electronic properties. In this work we present results of time-resolved cathodoluminescence for single ZnCdSe QD's identifying a slow carrier feeding mechanism which leads to long-living excitonic luminescence. The feeding is attributed to phonon-assisted tunneling of charge carriers trapped in the vicinity of the QD's.

引用

页码：1231 / 1232

页数：2

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