Status of SiC bulk growth processes

被引：28
|
作者：
Chaussende, D.
Wellmann, P. J.
Pons, M.
机构：
[1] INPGrenoble, CNRS, Mat & Genie Phys Lab, F-38016 Grenoble 1, France
[2] Univ Erlangen Nurnberg, Dept Mat 6, D-91058 Erlangen, Germany
[3] UJF, CNRS, INPGrenoble, F-38402 St Martin Dheres, France
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2007年 / 40卷 / 20期
关键词：
D O I：
10.1088/0022-3727/40/20/S02
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The present paper gives an overview of the different routes to grow SiC single crystals. The focus is put on the new emerging processes compared with the well established ones. A review of the process engineering modelling is given. Finally, some selected results are pointed out as they should be considered for the future development of SiC material.
引用
收藏
页码：6150 / 6158
页数：9
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