Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28

被引：46

作者：

Weis, C. D. ^{[1
,2
]}

Lo, C. C. ^{[1
,3
]}

Lang, V. ^{[4
]}

Tyryshkin, A. M. ^{[5
]}

George, R. E. ^{[6
]}

Yu, K. M. ^{[7
]}

Bokor, J. ^{[3
]}

Lyon, S. A. ^{[5
]}

Morton, J. J. L. ^{[4
,6
]}

Schenkel, T. ^{[1
]}

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Accelerator & Fus Res, Berkeley, CA 94720 USA

[2] Ilmenau Univ Technol, Dept Micro & Nanoelect Syst, D-98684 Ilmenau, Germany

[3] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

[4] Univ Oxford, Dept Mat, Oxford OX1 3PH, England

[5] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

[6] Univ Oxford, Dept Phys, Clarendon Lab, CAESR, Oxford OX1 3PU, England

[7] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 17期

基金：

英国工程与自然科学研究理事会;

关键词：

QUANTUM COMPUTER; NUCLEAR-SPIN; SILICON; DEFECTS;

D O I：

10.1063/1.4704561

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from bismuth ion implantation is repaired during thermal annealing as evidenced by narrow spin resonance linewidths (B-pp = 12 mu T) and long spin coherence times (T-2 = 0.7 ms, at temperature T = 8 K). The results qualify ion implanted bismuth as a promising candidate for spin qubit integration in silicon. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4704561]

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页数：4

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