Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28

被引：46
|
作者：
Weis, C. D. [1 ,2 ]
Lo, C. C. [1 ,3 ]
Lang, V. [4 ]
Tyryshkin, A. M. [5 ]
George, R. E. [6 ]
Yu, K. M. [7 ]
Bokor, J. [3 ]
Lyon, S. A. [5 ]
Morton, J. J. L. [4 ,6 ]
Schenkel, T. [1 ]
机构：
[1] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Accelerator & Fus Res, Berkeley, CA 94720 USA
[2] Ilmenau Univ Technol, Dept Micro & Nanoelect Syst, D-98684 Ilmenau, Germany
[3] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
[4] Univ Oxford, Dept Mat, Oxford OX1 3PH, England
[5] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
[6] Univ Oxford, Dept Phys, Clarendon Lab, CAESR, Oxford OX1 3PU, England
[7] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA
来源：
APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 17期
基金：
英国工程与自然科学研究理事会;
关键词：
QUANTUM COMPUTER; NUCLEAR-SPIN; SILICON; DEFECTS;
D O I：
10.1063/1.4704561
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from bismuth ion implantation is repaired during thermal annealing as evidenced by narrow spin resonance linewidths (B-pp = 12 mu T) and long spin coherence times (T-2 = 0.7 ms, at temperature T = 8 K). The results qualify ion implanted bismuth as a promising candidate for spin qubit integration in silicon. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4704561]
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