MEMS parallel-plate tunable capacitors are widely used in different areas such as tunable filters, resonators and communications (RF) systems for their simple structures, high Q-factors and small sizes. However, these capacitors have relatively low tuning range (50%) and are subjected to highly sensitive and nonlinear capacitance-voltage (C-V) responses. In this paper novel designs are developed which have C-V responses with high linearity and tunability and low sensitivity. The designs use the flexibility of the moving plates. The plate is segmented to provide a controllable flexibility. Segments are connected together at end nodes by torsional springs. Under each node there is a step which limits the vertical movement of that node. An optimization program finds the best set of step heights that provides the highest linearity. Two numerical examples of three-segmented- and six-segmented-plate capacitors verify that the segmentation of moving plate can considerably improve the linearity without decreasing the conventional tunability. A two-segmented-plate capacitor is then designed for standard processes which cannot fabricate steps of different heights. The new design uses a flexible step (spring) under middle node. The simulation of a capacitor with flexible middle step, designed for PolyMUMPs process, demonstrates a C-V response with high tunability and linearity and low sensitivity.
机构:
Chinese Acad Sci, Inst Microelect, Beijing, Peoples R China
Univ Chinese Acad Sci, Beijing, Peoples R China
Chinese Acad Sci, Key Lab Sci & Technol Silicon Devices, Beijing, Peoples R China
UCLouvain, ICTEAM, Louvain, BelgiumChinese Acad Sci, Inst Microelect, Beijing, Peoples R China
Huang, Yang
Liu, Fanyu
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Chinese Acad Sci, Inst Microelect, Beijing, Peoples R China
Chinese Acad Sci, Key Lab Sci & Technol Silicon Devices, Beijing, Peoples R ChinaChinese Acad Sci, Inst Microelect, Beijing, Peoples R China
Liu, Fanyu
Cristoloveanu, Sorin
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IMEP INP Grenoble MINATEC, Grenoble, FranceChinese Acad Sci, Inst Microelect, Beijing, Peoples R China
Cristoloveanu, Sorin
Ma, Shiqi
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UCLouvain, ICTEAM, Louvain, BelgiumChinese Acad Sci, Inst Microelect, Beijing, Peoples R China
Ma, Shiqi
Nabet, Massinissa
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UCLouvain, ICTEAM, Louvain, BelgiumChinese Acad Sci, Inst Microelect, Beijing, Peoples R China
Nabet, Massinissa
Yan, Yiyi
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UCLouvain, ICTEAM, Louvain, BelgiumChinese Acad Sci, Inst Microelect, Beijing, Peoples R China
Yan, Yiyi
Li, Bo
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Chinese Acad Sci, Inst Microelect, Beijing, Peoples R China
Chinese Acad Sci, Key Lab Sci & Technol Silicon Devices, Beijing, Peoples R ChinaChinese Acad Sci, Inst Microelect, Beijing, Peoples R China
Li, Bo
Li, Binhong
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Chinese Acad Sci, Key Lab Sci & Technol Silicon Devices, Beijing, Peoples R ChinaChinese Acad Sci, Inst Microelect, Beijing, Peoples R China
Li, Binhong
Nguyen, Bich-Yen
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SOITEC, Spring Valley, CA USAChinese Acad Sci, Inst Microelect, Beijing, Peoples R China
Nguyen, Bich-Yen
Han, Zhengsheng
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Chinese Acad Sci, Inst Microelect, Beijing, Peoples R China
Univ Chinese Acad Sci, Beijing, Peoples R China
Chinese Acad Sci, Key Lab Sci & Technol Silicon Devices, Beijing, Peoples R ChinaChinese Acad Sci, Inst Microelect, Beijing, Peoples R China
Han, Zhengsheng
Raskin, Jean-Pierre
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UCLouvain, ICTEAM, Louvain, BelgiumChinese Acad Sci, Inst Microelect, Beijing, Peoples R China
机构:
Purdue Univ, West Lafayette, IN, USA, Purdue Univ, West Lafayette, IN, USAPurdue Univ, West Lafayette, IN, USA, Purdue Univ, West Lafayette, IN, USA
Gray, Jeffrey L.
Lundstrom, Mark S.
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Purdue Univ, West Lafayette, IN, USA, Purdue Univ, West Lafayette, IN, USAPurdue Univ, West Lafayette, IN, USA, Purdue Univ, West Lafayette, IN, USA