QUANTUM DOT HETEROSTRUCTURES FOR SEMICONDUCTOR DEVICES

被引:0
|
作者
Ledentsov, Nikolay N. [1 ,2 ,3 ]
机构
[1] VI Syst GmbH, Berlin, Germany
[2] RAS, Ioffe Inst, St Petersburg, Russia
[3] Acad Univ, St Petersburg, Russia
关键词
Quantum dot; semiconductor heterostructure; laser diode; LED; silicon photonics; cryptography; entanglement; nanoelectronics;
D O I
10.37904/nanocon.2019.8446
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
"Quantum dot (QD)" or, other name, "quantum box", represents an ultimate case of size quantization in solids, where the motion of the charge carriers is restricted in all three dimensions (3D). The critical condition for the formation of truly atom-like density states is a high quality of interfaces surrounding such nano-objects. Defects at interfaces and the related scattering and nonradiative recombination effects drastically reduce or even eliminate advantages of the 3D nanoobjects. Consequently, heteroepitaxial overgrowth became necessary before all the advantages of zero-dimensional electron spectrum in QDs were implemented both in core-shell colloidal QDs and in epitaxially-grown QD heterostructures.
引用
收藏
页码:14 / 21
页数:8
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