Fabrication and characterization of quantum dot devices based on tetralayer graphene/hexagonal boron nitride heterostructures

被引：0
|
作者：
Iwasaki, Takuya [1 ]
Kato, Taku [2 ]
Ito, Hirohito [2 ]
Watanabe, Kenji [3 ]
Taniguchi, Takashi [3 ]
Wakayama, Yutaka [4 ]
Hatano, Tsuyoshi [2 ]
Moriyama, Satoshi [4 ]
机构：
[1] International Center for Young Scientists, National Institute for Materials Science, Ibaraki, Tsukuba,305-0044, Japan
[2] Department of Electrical and Electronic Engineering, Nihon University, Koriyama, Fukushima,963-8642, Japan
[3] Research Center for Functional Materials, National Institute for Materials Science, Ibaraki, Tsukuba,305-0044, Japan
[4] International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Ibaraki, Tsukuba,305-0044, Japan
来源：
Japanese Journal of Applied Physics | 2020年 / 59卷 / 02期
基金：
日本学术振兴会;
关键词：
Graphene quantum dots - Nanocrystals - Stochastic systems - Temperature - Graphene - Quantum chemistry - Semiconductor quantum dots - Electron transport properties - III-V semiconductors - Nitrides;
D O I：
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