Preparation of indium sulfide thin films by spray pyrolysis using a new precursor indium nitrate

被引：38

作者：

John, TT

Kartha, CS

Vijayakumar, KP ^{[1
]}

Abe, T

Kashiwaba, Y

机构：

[1] Cochin Univ Sci & Technol, Thin Film Photovolta Div, Dept Phys, Cochin 682022, Kerala, India

[2] Iwate Univ, Dept Elect & Elect Engn, Morioka, Iwate 0208551, Japan

来源：

APPLIED SURFACE SCIENCE | 2005年 / 252卷 / 05期

关键词：

In2S3; indium nitrate; chemical spray pyrolysis; In/S ratio;

D O I：

10.1016/j.apsusc.2005.02.093

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Indium nitrate and thiourea were used as the precursor solutions for preparing indium sulfide thin films using Chemical Spray Pyrolysis (CSP) technique. Films having various In/S ratios were characterized using X-Ray Diffraction (XRD), Energy Dispersive X-ray Analysis (EDX), Scanning Electron Microscopy (SEM), X-ray Photoelectron Spectroscopy (XPS), optical absorption, transmission and photosensitivity measurements. Sample having In/S ratio 2/3 showed better crystallinity with band gap 2.66 eV Depth profile of the sample also indicated the formation of indium sulfide. It was also observed that In/S ratio in the initial precursor solution determined the composition as well as electrical properties of the films. Maximum photosensitivity was observed for the sample prepared using solution having In/S ratio 2/4. (c) 2005 Elsevier B.V All rights reserved.

引用

页码：1360 / 1367

页数：8

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