Preparation of indium sulfide thin films by spray pyrolysis using a new precursor indium nitrate

被引：38
|
作者：
John, TT
Kartha, CS
Vijayakumar, KP [1 ]
Abe, T
Kashiwaba, Y
机构：
[1] Cochin Univ Sci & Technol, Thin Film Photovolta Div, Dept Phys, Cochin 682022, Kerala, India
[2] Iwate Univ, Dept Elect & Elect Engn, Morioka, Iwate 0208551, Japan
来源：
APPLIED SURFACE SCIENCE | 2005年 / 252卷 / 05期
关键词：
In2S3; indium nitrate; chemical spray pyrolysis; In/S ratio;
D O I：
10.1016/j.apsusc.2005.02.093
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Indium nitrate and thiourea were used as the precursor solutions for preparing indium sulfide thin films using Chemical Spray Pyrolysis (CSP) technique. Films having various In/S ratios were characterized using X-Ray Diffraction (XRD), Energy Dispersive X-ray Analysis (EDX), Scanning Electron Microscopy (SEM), X-ray Photoelectron Spectroscopy (XPS), optical absorption, transmission and photosensitivity measurements. Sample having In/S ratio 2/3 showed better crystallinity with band gap 2.66 eV Depth profile of the sample also indicated the formation of indium sulfide. It was also observed that In/S ratio in the initial precursor solution determined the composition as well as electrical properties of the films. Maximum photosensitivity was observed for the sample prepared using solution having In/S ratio 2/4. (c) 2005 Elsevier B.V All rights reserved.
引用
收藏
页码：1360 / 1367
页数：8
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