Anomalous temperature dependence of the current in a metal-oxide-polymer resistive switching diode

被引：7
|
作者：
Gomes, Henrique L. [1 ]
Rocha, Paulo R. F. [1 ]
Kiazadeh, Asal [1 ]
De Leeuw, Dago M. [2 ]
Meskers, Stefan C. J. [3 ]
机构：
[1] Univ Algarve, CEOT, P-8005139 Faro, Portugal
[2] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands
[3] Eindhoven Univ Technol, NL-5600 MB Eindhoven, Netherlands
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2011年 / 44卷 / 02期
关键词：
NONVOLATILE MEMORY; FILMS; CONDUCTION; ELEMENTS; WATER;
D O I：
10.1088/0022-3727/44/2/025103
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Metal-oxide polymer diodes exhibit non-volatile resistive switching. The current-voltage characteristics have been studied as a function of temperature. The low-conductance state follows a thermally activated behaviour. The high-conductance state shows a multistep-like behaviour and below 300K an enormous positive temperature coefficient. This anomalous behaviour contradicts the widely held view that switching is due to filaments that are formed reversibly by the diffusion of metal atoms. Instead, these findings together with small-signal impedance measurements indicate that creation and annihilation of filaments is controlled by filling of shallow traps localized in the oxide or at the oxide/polymer interface.
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页数：5
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