Low-Frequency Diffusion Noise in Resistive-Switching Memories Based on Metal-Oxide Polymer Structure

被引：16
|
作者：
Rocha, Paulo R. F. [1 ,2 ]
Gomes, Henrique Leonel [1 ,2 ]
Vandamme, Lode K. J. [3 ]
Chen, Qian [1 ,2 ]
Kiazadeh, Asal [1 ,2 ]
de Leeuw, Dago M. [4 ,5 ]
Meskers, Stefan C. J.
机构：
[1] Inst Telecomunicacoes, P-1049001 Lisbon, Portugal
[2] Univ Algarve, P-8005139 Faro, Portugal
[3] Eindhoven Univ Technol, Dept Elect Engn, NL-5600 MB Eindhoven, Netherlands
[4] Philips Res Labs, NL-5656 AE Eindhoven, Netherlands
[5] Univ Groningen, NL-9700 AB Groningen, Netherlands
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2012年 / 59卷 / 09期
关键词：
Diffusion noise; electrical properties; low-frequency noise; nonvolatile memory; random telegraph noise; resistive switching; 1/F NOISE; 1-F NOISE; FLUCTUATIONS; NIOBIUM; FILMS;
D O I：
10.1109/TED.2012.2204059
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Low-frequency noise is studied in resistive-switching memories based on metal-oxide polymer diodes. The noise spectral power follows a 1/f(gamma) behavior, with gamma = 1 in the ohmic region and with gamma = 3/2 at high bias beyond the ohmic region. The exponent gamma = 3/2 is explained as noise caused by Brownian motion or diffusion of defects which induce fluctuations in diode current. The figure of merit to classify 1/f noise in thin films has an estimated value of 10(-21) cm(2)/Omega, which is typical for metals or doped semiconductors. This value in combination with the low diode current indicates that the 1/f noise is generated in the narrow localized regions in the polymer between the contacts. The analysis unambiguously shows that the current in bistable nonvolatile memories is filamentary.
引用
收藏
页码：2483 / 2487
页数：5
相关论文
共 50 条
  • [1] LOW-FREQUENCY NOISE TO CHARACTERIZE RESISTIVE SWITCHING OF METAL OXIDE ON POLYMER MEMORIES
    Vandamme, L. K. J.
    Colle, M.
    De Leeuw, D. M.
    Verbakel, F.
    [J]. FLUCTUATION AND NOISE LETTERS, 2011, 10 (04): : 497 - 514
  • [2] Interfacial Metal-Oxide Interactions in Resistive Switching Memories
    Cho, Deok-Yong
    Luebben, Michael
    Wiefels, Stefan
    Lee, Kug-Seung
    Valov, Ilia
    [J]. ACS APPLIED MATERIALS & INTERFACES, 2017, 9 (22) : 19287 - 19295
  • [3] The role of internal structure in the anomalous switching dynamics of metal-oxide/polymer resistive random access memories
    Rocha, Paulo R. F.
    Kiazadeh, Asal
    De Leeuw, Dago M.
    Meskers, Stefan C. J.
    Verbakel, Frank
    Taylor, David M.
    Gomes, Henrique L.
    [J]. JOURNAL OF APPLIED PHYSICS, 2013, 113 (13)
  • [4] Characterization of low-frequency noise in the resistive switching of transition metal oxide HfO2
    Yu, Shimeng
    Jeyasingh, Rakesh
    Wu, Yi
    Wong, H. -S. Philip
    [J]. PHYSICAL REVIEW B, 2012, 85 (04)
  • [5] Relationship Between Conduction Mechanism and Low-Frequency Noise in Polycrystalline-TiOx-Based Resistive-Switching Memory Devices
    Lee, Jung-Kyu
    Cho, In-Tak
    Kwon, Hyuck-In
    Hwang, Cheol Seong
    Park, Chan Hyeong
    Lee, Jong-Ho
    [J]. IEEE ELECTRON DEVICE LETTERS, 2012, 33 (07) : 1063 - 1065
  • [6] Anomalous time relaxation of the nonvolatile resistive state in bipolar resistive-switching oxide-based memories
    Schulman, A.
    Rozenberg, M. J.
    Acha, C.
    [J]. PHYSICAL REVIEW B, 2012, 86 (10):
  • [7] Electroforming Process in Metal-Oxide-Polymer Resistive Switching Memories
    Chen, Qian
    Gomes, Henrique L.
    Kiazadeh, Asal
    Rocha, Paulo R. F.
    De Leeuw, Dago M.
    Meskers, Stefan C. J.
    [J]. TECHNOLOGICAL INNOVATION FOR VALUE CREATION, 2012, 372 : 527 - +
  • [8] Analysis of Low-Frequency Noise in Quantum Dot/Metal-Oxide Phototransistors With Metal Chalcogenide Interfaces
    Kim, Jaehyun
    Kim, Myung-Gil
    Facchetti, Antonio
    Park, Sung Kyu
    [J]. IEEE ELECTRON DEVICE LETTERS, 2022, 43 (09) : 1499 - 1502
  • [9] Impact of low-frequency noise on read distributions of resistive switching memory (RRAM)
    Ambrogio, S.
    Balatti, S.
    McCaffrey, V.
    Wang, D.
    Ielmini, D.
    [J]. 2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2014,
  • [10] Comparative analysis of low-frequency noise based resistive switching phenomenon for filamentary and interfacial RRAM devices
    Lee, Jung-Kyu
    Kim, Sungjun
    [J]. CHAOS SOLITONS & FRACTALS, 2023, 173
12345