Low-Frequency Diffusion Noise in Resistive-Switching Memories Based on Metal-Oxide Polymer Structure

被引：16

作者：

Rocha, Paulo R. F. ^{[1
,2
]}

Gomes, Henrique Leonel ^{[1
,2
]}

Vandamme, Lode K. J. ^{[3
]}

Chen, Qian ^{[1
,2
]}

Kiazadeh, Asal ^{[1
,2
]}

de Leeuw, Dago M. ^{[4
,5
]}

Meskers, Stefan C. J.

机构：

[1] Inst Telecomunicacoes, P-1049001 Lisbon, Portugal

[2] Univ Algarve, P-8005139 Faro, Portugal

[3] Eindhoven Univ Technol, Dept Elect Engn, NL-5600 MB Eindhoven, Netherlands

[4] Philips Res Labs, NL-5656 AE Eindhoven, Netherlands

[5] Univ Groningen, NL-9700 AB Groningen, Netherlands

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2012年 / 59卷 / 09期

关键词：

Diffusion noise; electrical properties; low-frequency noise; nonvolatile memory; random telegraph noise; resistive switching; 1/F NOISE; 1-F NOISE; FLUCTUATIONS; NIOBIUM; FILMS;

D O I：

10.1109/TED.2012.2204059

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low-frequency noise is studied in resistive-switching memories based on metal-oxide polymer diodes. The noise spectral power follows a 1/f(gamma) behavior, with gamma = 1 in the ohmic region and with gamma = 3/2 at high bias beyond the ohmic region. The exponent gamma = 3/2 is explained as noise caused by Brownian motion or diffusion of defects which induce fluctuations in diode current. The figure of merit to classify 1/f noise in thin films has an estimated value of 10(-21) cm(2)/Omega, which is typical for metals or doped semiconductors. This value in combination with the low diode current indicates that the 1/f noise is generated in the narrow localized regions in the polymer between the contacts. The analysis unambiguously shows that the current in bistable nonvolatile memories is filamentary.

引用

页码：2483 / 2487

页数：5

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