Electroforming Process in Metal-Oxide-Polymer Resistive Switching Memories

被引：0

作者：

Chen, Qian ^{[1
]}

Gomes, Henrique L. ^{[1
]}

Kiazadeh, Asal ^{[1
]}

Rocha, Paulo R. F. ^{[1
]}

De Leeuw, Dago M. ^{[2
]}

Meskers, Stefan C. J. ^{[3
]}

机构：

[1] Univ Algarve, CEOT, Campus Gambelas, P-8000139 Faro, Portugal

[2] Philips Res Labs, NL-5656 AE Eindhoven, Netherlands

[3] Eindhoven Univ Technol, Mol Mat & Nanosyst, NL-5600 MB Eindhoven, Netherlands

来源：

TECHNOLOGICAL INNOVATION FOR VALUE CREATION | 2012年 / 372卷

关键词：

Resistive Random Access Memory (RRAM); electroforming soft-breakdown; non-volatile memory; NEGATIVE-RESISTANCE; THIN-FILMS; CONDUCTION; BREAKDOWN; CHARGE; OXYGEN; AL2O3; SIO2;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Electroforming, of an Al/Al2O3/polymer/Al resistive switching diode is reported. Electroforming is a dielectric soft-breakdown mechanism leading to hysteretic current-voltage characteristics and non-volatile memory behavior. Electron trapping occurs at early stages of electroforming. Trapping is physically located at the oxide/polymer interface. The detrapping kinetics is faster under reverse bias and for thicker oxides layers. Thermally detrapping experiments give a trap depth of 0.65 eV and a density of 5x10(17)/cm(2). It is proposed that the trapped electrons induce a dipole layer across the oxide. The associated electric field triggers breakdown and ultimately dictate the overall memory characteristics.

引用

页码：527 / +

页数：2

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