Millimeter-wave characteristics of flip-chip interconnects for multichip modules

被引：60
|
作者：
Heinrich, W [1 ]
Jentzsch, A
Baumann, G
机构：
[1] Ferdinand Braun Inst Hochstfrequenztech, D-12489 Berlin, Germany
[2] SEL Verteidigungssyst GmbH, D-75179 Pforzheim, Germany
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1998年 / 46卷 / 12期
关键词：
finite-difference methods; flip-chip devices; MMIC multichip modules; packaging;
D O I：
10.1109/22.739208
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Electromagnetic simulation and measurement data of flip-chip transitions are presented, First-order effects are identified and design criteria for millimeter-wave multichip interconnects are derived. Results cover chip detuning and bump geometry as well as simplified modeling. In a coplanar environment, the dip-chip scheme provides interconnects with excellent low-reflective properties. For conductor-backed structures, parasitic modes occur leading to unwanted crosstalk, These effects dominate the behavior so that overall performance of the flip-chip scheme can be evaluated properly only in conjunction with the actual motherboard packaging setup.
引用
收藏
页码：2264 / 2268
页数：5
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