Anisotropic charge transport and contact resistance of 6,13-bis(triisopropylsilylethynyl) pentacene field-effect transistors fabricated by a modified flow-coating method

被引：66

作者：

Sakamoto, Kenji ^{[1
]}

Ueno, Junichi ^{[1
,2
]}

Bulgarevich, Kirill ^{[1
]}

Miki, Kazushi ^{[1
,2
]}

机构：

[1] Natl Inst Mat Sci NIMS, Tsukuba, Ibaraki 3050044, Japan

[2] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058573, Japan

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 12期

关键词：

SINGLE-CRYSTAL; PERFORMANCE; DEPOSITION;

D O I：

10.1063/1.3695169

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using a modified flow-coating method, bottom-gate/bottom-contact type organic field-effect transistors (OFETs) with a highly oriented active layer of 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) were fabricated. The flow-coated TIPS-pentacene films were fairly uniform and consisted of arrays of needle-shaped crystals along the flow-coating direction. The uniformity allowed us to determine the contact resistance by a transfer line method. The usefulness of the modified flow-coating method for fabricating high performance OFETs has been demonstrated, and we found that not only the field-effect mobility but also the contact resistance significantly depends on the channel current direction with respect to the flow-coating direction. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3695169]

引用

页数：4