Anisotropic charge transport and contact resistance of 6,13-bis(triisopropylsilylethynyl) pentacene field-effect transistors fabricated by a modified flow-coating method

被引：66
|
作者：
Sakamoto, Kenji [1 ]
Ueno, Junichi [1 ,2 ]
Bulgarevich, Kirill [1 ]
Miki, Kazushi [1 ,2 ]
机构：
[1] Natl Inst Mat Sci NIMS, Tsukuba, Ibaraki 3050044, Japan
[2] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058573, Japan
来源：
APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 12期
关键词：
SINGLE-CRYSTAL; PERFORMANCE; DEPOSITION;
D O I：
10.1063/1.3695169
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Using a modified flow-coating method, bottom-gate/bottom-contact type organic field-effect transistors (OFETs) with a highly oriented active layer of 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) were fabricated. The flow-coated TIPS-pentacene films were fairly uniform and consisted of arrays of needle-shaped crystals along the flow-coating direction. The uniformity allowed us to determine the contact resistance by a transfer line method. The usefulness of the modified flow-coating method for fabricating high performance OFETs has been demonstrated, and we found that not only the field-effect mobility but also the contact resistance significantly depends on the channel current direction with respect to the flow-coating direction. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3695169]
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页数：4
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