Uniformization of radial temperature gradient in sublimation growth of SiC

被引：0

作者：

Tanaka, H ^{[1
]}

Nishiguchi, T ^{[1
]}

Sasaki, M ^{[1
]}

Ohshima, S ^{[1
]}

Nishino, S ^{[1
]}

机构：

[1] Kyoto Inst Technol, Dept Elect & Informat Sci, Sakyo Ku, Kyoto 6068585, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS - 2002 | 2002年 / 433-4卷

关键词：

diameter expansion; sublimation; tantalum; temperature gradient;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Large diameter silicon carbide bulk crystals were demonstrated recently. However, these were not necessarily high quality crystals because of excessive thermal stresses. We tried to make the radial temperature distribution uniform using tantalum cylinder and cone as a thermal reflector in order to decrease excessive thermal stresses in the growing bulk. As a result, the flat top bulk crystals were obtained. Diameter expansion and quality of SiC were due to the radial temperature gradient. When the temperature profile and radial temperature gradient were not optimized, many cracks were generated in the crystal.

引用

页码：71 / 74

页数：4

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