Uniformization of radial temperature gradient in sublimation growth of SiC

被引：0

作者：

Tanaka, H ^{[1
]}

Nishiguchi, T ^{[1
]}

Sasaki, M ^{[1
]}

Ohshima, S ^{[1
]}

Nishino, S ^{[1
]}

机构：

[1] Kyoto Inst Technol, Dept Elect & Informat Sci, Sakyo Ku, Kyoto 6068585, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS - 2002 | 2002年 / 433-4卷

关键词：

diameter expansion; sublimation; tantalum; temperature gradient;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Large diameter silicon carbide bulk crystals were demonstrated recently. However, these were not necessarily high quality crystals because of excessive thermal stresses. We tried to make the radial temperature distribution uniform using tantalum cylinder and cone as a thermal reflector in order to decrease excessive thermal stresses in the growing bulk. As a result, the flat top bulk crystals were obtained. Diameter expansion and quality of SiC were due to the radial temperature gradient. When the temperature profile and radial temperature gradient were not optimized, many cracks were generated in the crystal.

引用

页码：71 / 74

页数：4

共 50 条

[31] SUBLIMATION OF TRIBROMOPHENOL IN A GRADIENT TEMPERATURE TUBE FURNACE
SHIGETOM.Y
ANALYTICAL CHEMISTRY, 1973, 45 (02) : 411 - 413
[32] A practical model for estimating the growth rate in sublimation growth of SiC
Råback, P
Yakimova, R
Syväjärvi, M
Nieminen, R
Janzén, E
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 : 89 - 92
[33] Practical model for estimating the growth rate in sublimation growth of SiC
Raback, P.
Yakimova, R.
Syvajarvi, M.
Nieminen, R.
Janzen, E.
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 1999, 61 : 89 - 92
[34] Sublimation growth of bulk β-SiC crystals on (100) and (111)β-SiC substrates
Jayatirtha, HN
Spencer, MG
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 77 - 80
[35] The Influence of the Temperature Gradient on the Defect Structure of 3C-SiC Grown Heteroepitaxially on 6H-SiC by Sublimation Epitaxy
Marinova, M.
Mantzari, A.
Beshkova, M.
Syvajarvi, M.
Yakimova, R.
Polychroniadis, E. K.
SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 : 367 - +
[36] Sublimation growth of bulk β-SiC crystals on (100) and (111) β-SiC substrates
Howard Univ, Washington, United States
Materials Science Forum, 1998, 264-268 (pt 1): : 77 - 80
[37] Homogenization of Radial Temperature by a Tungsten Sink in Sublimation Growth of 45 mm AlN Single Crystal
Yu, Yue
Liu, Botao
Tang, Xia
Liu, Sheng
Gao, Bing
MATERIALS, 2020, 13 (23) : 1 - 9
[38] Transient numerical study of temperature gradients during sublimation growth of SiC: Dependence on apparatus design
Geiser, Juergen
Klein, Olaf
Philip, Peter
JOURNAL OF CRYSTAL GROWTH, 2006, 297 (01) : 20 - 32
[39] Controlled growth of SiC and GaN by sublimation sandwich method
Mokhov, EN
Vodakov, YA
COMPOUND SEMICONDUCTORS 1996, 1997, (155): : 177 - 182
[40] Transport phenomena in sublimation growth of SiC bulk crystals
Segal, AS
Vorob'ev, AN
Karpov, SY
Makarov, YN
Mokhov, EN
Ramm, MG
Ramm, MS
Roenkov, AD
Vodakov, YA
Zhmakin, AI
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 : 40 - 43

← 1 2 3 4 5 →