A unified short-channel compact model for cylindrical surrounding-gate MOSFET

被引：30

作者：

Cousin, Bastien ^{[1
,2
]}

Reyboz, Marina ^{[2
]}

Rozeau, Olivier ^{[1
]}

Jaud, Marie-Anne ^{[1
]}

Ernst, Thomas ^{[1
]}

Jomaah, Jalal ^{[2
]}

机构：

[1] CEA, LETI, MINATEC, F-38054 Grenoble, France

[2] INPG, MINATEC, IMEP LAHC, F-38016 Grenoble, France

来源：

SOLID-STATE ELECTRONICS | 2011年 / 56卷 / 01期

关键词：

Device modeling; Gate-all-around MOSFET; Short-channel effects; Surface potential model; ALL-AROUND MOSFETS; SOI MOSFETS;

D O I：

10.1016/j.sse.2010.11.008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time, a continuous and explicit model valid in all operating regions, for undoped short-channel cylindrical gate-all-around (GAA) MOSFETs, is presented in this study. From a two-dimensional analysis, the threshold voltage roll-off, the drain-induced barrier lowering (DIBL) and the subthreshold swing are explicitly modeled. Short-channel effects are then implemented into a continuous drain-current model based on an effective surface potential approach using the gradual channel approximation. Improving the model behavior in the saturation operating region by accounting the channel pinch-off displacement, channel length modulation is studied and implemented as well. Analytical results are compared to TCAD-Atlas numerical simulations and validate the short-channel model in all operating modes making it suitable for circuit design simulations. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：40 / 46

页数：7

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