Optical and Electrical Properties of Al/(p)Bi2S3 Schottky Junction

被引：2
|
作者：
Kachari, T. [1 ]
Wary, G. [2 ]
Rahman, A. [3 ]
机构：
[1] Bongaigaon Polytech, Bongaigaog, Assam, India
[2] Cotton Coll, Dept Phys, Gauhati, India
[3] Gauhati Univ, Dept Phys, Gauhati, India
来源：
5TH INTERNATIONAL CONFERENCE ON THERMOPHYSICAL PROPERTIES | 2010年 / 1249卷
关键词：
Barrier height; Ideality factor; PV effect;
D O I：
10.1063/1.3466558
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Thin film Al/(p)Bi2S3 Schottky junctions were prepared by vacuum evaporation under pressure 10(-6) Torr. The p-type Bi2S3 thin films with acceptor concentration (3.36-7.33)x10(16)/cm(3) were obtained by evaporating 'In' along with Bi2S3 powder and then annealing the films at 453K for 5 hours. Different junction-parameters such as ideality factor, barrier height, effective Richardson's constant, short-circuit current, etc. were determined from I-V characteristics. The junctions exhibited rectifying I-V characteristics and also photovoltaic effect. Ideality factor was found to decrease with the increase of temperature. Proper doping, annealing, and hydrogenation are necessary to reduce the series resistance so as to achieve high carrier efficiency. More works are being carried out in this direction.
引用
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页码：202 / +
页数：2
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