Optical and Electrical Properties of Al/(p)Bi2S3 Schottky Junction

Thin film Al/(p)Bi2S3 Schottky junctions were prepared by vacuum evaporation under pressure 10(-6) Torr. The p-type Bi2S3 thin films with acceptor concentration (3.36-7.33)x10(16)/cm(3) were obtained by evaporating 'In' along with Bi2S3 powder and then annealing the films at 453K for 5 hours. Different junction-parameters such as ideality factor, barrier height, effective Richardson's constant, short-circuit current, etc. were determined from I-V characteristics. The junctions exhibited rectifying I-V characteristics and also photovoltaic effect. Ideality factor was found to decrease with the increase of temperature. Proper doping, annealing, and hydrogenation are necessary to reduce the series resistance so as to achieve high carrier efficiency. More works are being carried out in this direction.