Persistent infrared photoconductivity in InAs/GaAs structures with quantum dot layer

被引：2
|
作者：
Kulbachinskii, V. A.
Kytin, V. G.
Rogozin, V. A.
Zvonkov, B. N.
Dashevsky, Z.
Casian, V. A.
机构：
[1] Moscow MV Lomonosov State Univ, Low Temp Phys Dept, Moscow 119992, Russia
[2] NI Lobachevskii State Univ, Physicotech Res Inst, Nizhnii Novgorod 603600, Russia
[3] Ben Gurion Univ Negev, Dept Mat Engn, IL-84105 Beer Sheva, Israel
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2007年 / 39卷 / 01期
基金：
俄罗斯基础研究基金会;
关键词：
quantum dots; persistent infra-red photoconductivity; GaAs; transport phenomena; Shubnikov-de Haas effect;
D O I：
10.1016/j.physe.2006.11.001
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Persistent lateral infra-red photoconductivity has been observed and investigated in InAs/GaAs layers with quantum dots (QD) in the temperature range 4.2 < T< 300 K. The relaxation of photoconductivity was logarithmic in a certain time range after switching off the light, while the rate of the decay of photoconductivity increases strongly when temperature increases. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：1 / 7
页数：7
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