Persistent infrared photoconductivity in InAs/GaAs structures with quantum dot layer

被引：2
|
作者：
Kulbachinskii, V. A.
Kytin, V. G.
Rogozin, V. A.
Zvonkov, B. N.
Dashevsky, Z.
Casian, V. A.
机构：
[1] Moscow MV Lomonosov State Univ, Low Temp Phys Dept, Moscow 119992, Russia
[2] NI Lobachevskii State Univ, Physicotech Res Inst, Nizhnii Novgorod 603600, Russia
[3] Ben Gurion Univ Negev, Dept Mat Engn, IL-84105 Beer Sheva, Israel
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2007年 / 39卷 / 01期
基金：
俄罗斯基础研究基金会;
关键词：
quantum dots; persistent infra-red photoconductivity; GaAs; transport phenomena; Shubnikov-de Haas effect;
D O I：
10.1016/j.physe.2006.11.001
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Persistent lateral infra-red photoconductivity has been observed and investigated in InAs/GaAs layers with quantum dots (QD) in the temperature range 4.2 < T< 300 K. The relaxation of photoconductivity was logarithmic in a certain time range after switching off the light, while the rate of the decay of photoconductivity increases strongly when temperature increases. (C) 2007 Elsevier B.V. All rights reserved.
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页码：1 / 7
页数：7
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