Correlations between microstructure and Q-factor of tunable thin film bulk acoustic wave resonators

被引:26
|
作者
Vorobiev, A. [1 ]
Gevorgian, S. [1 ]
Loffler, M. [2 ]
Olsson, E. [2 ]
机构
[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden
[2] Chalmers Univ Technol, Dept Appl Phys, SE-41296 Gothenburg, Sweden
关键词
RELAXATION; ELECTRODES;
D O I
10.1063/1.3626939
中图分类号
O59 [应用物理学];
学科分类号
摘要
Correlations between microstructure and Q-factor of tunable solidly mounted Ba0.25Sr0.75TiO3 (BSTO) thin film bulk acoustic wave resonators are studied using analysis of test structures prepared at different growth temperatures of the BSTO films varying in the range 450-650 degrees C. The observed changes in the Q-factor with growth temperature are correlated with related changes in microstructure, including the grain size, texture misalignment, interfacial amorphous layer, surface roughness, and deterioration of the Bragg reflector layers. The correlations are established through analysis of corresponding extrinsic acoustic loss mechanisms, including Rayleigh scattering at localized defects, acoustic attenuation by amorphous layer, generation of the shear waves leaking into the substrate, waves scattering by surface roughness, and resonance broadening by local thickness variations. It is shown that the waves scattering by surface roughness at the BSTO film interfaces is the main loss mechanism limiting the Q-factor of the BSTO thin film bulk acoustic wave resonators. (C) 2011 American Institute of Physics. [doi:10.1063/1.3626939]
引用
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页数:11
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