Parasitic capacitance optimization of GaAsHBT class E power amplifier for high efficiency CDMA EER transmitter

被引：11
|
作者：
Kim, Ki Young [1 ]
Kim, Ji Hoon [1 ]
Park, Sung Min [1 ]
Park, Chul Soon [1 ]
机构：
[1] Informat & Commun Univ, Sch Engn, 119 Munjiro, Taejon 305732, South Korea
来源：
2007 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2007年
关键词：
class E; hetero-junction bipolar transistor; monolithic microwave integrated circuit; power amplifier;
D O I：
10.1109/RFIC.2007.380987
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A Class E power amplifier (PA) for a CDMA EER transmitter is implemented with GaAs HBT technology. This paper demonstrates an efficiency improvement with a parasitic capacitance compensation circuit. In order to obtain high output power, the PA needs the large emitter size of a main transistor. The larger the emitter size, the higher the parasitic capacitance should be. In particular, the parasitic C-BE affects a distortion of the input voltage signal and decreases the PA's efficiency. Using the compensation circuit, we obtain 7% collector efficiency improvement at a similar output power level. This PA exhibits output power of 29dBm and collector efficiency of 71% at 1.9GHz.
引用
收藏
页码：733 / +
页数：2
相关论文
共 50 条
  • [31] High Efficiency Class E Power Amplifier with Drain Source Merging Technique
    Padash, Mohsen
    Dehqan, Ali
    Yargholi, Mostafa
    Toofan, Siroos
    2014 22ND IRANIAN CONFERENCE ON ELECTRICAL ENGINEERING (ICEE), 2014, : 519 - 522
  • [32] Automatic 3D Design for Efficiency Optimization of a Class E Power Amplifier
    De Venuto, Daniela
    Mezzina, Giovanni
    Rabaey, Jan
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2018, 65 (02) : 201 - 205
  • [33] Cascode class-E power amplifier in 180/350 nm CMOS for EER system
    Rumyancev, Ivan A.
    Korotkov, Alexander S.
    Hauer, Johann
    2013 9TH CONFERENCE ON PH. D. RESEARCH IN MICROELECTRONICS AND ELECTRONICS (PRIME 2013), 2013, : 309 - 312
  • [34] Analysis of Power Loss of Class E Amplifier with Nonlinear Shunt Capacitance
    Suetsugu, Tadashi
    Wei, Xiuqin
    Kazimierczuk, Marian K.
    IEEJ JOURNAL OF INDUSTRY APPLICATIONS, 2014, 3 (01) : 68 - 74
  • [35] High frequency Class E power amplifier
    Hristov, M
    Dodeva, G
    Antonova, O
    Roussel, A
    2002 FIRST INTERNATIONAL IEEE SYMPOSIUM INTELLIGENT SYSTEMS, VOL III, STUDENT SESSION, PROCEEDINGS, 2002, : 48 - 51
  • [36] High Efficiency Dual-Mode RF Transmitter Using Envelope-Tracking Dual-Band Class-E Power Amplifier for W-CDMA/WiMAX Systems
    Chen, Chi-Tsan
    Li, Chien-Jung
    Horng, Tzyy-Sheng
    Jau, Je-Kuan
    Li, Jian-Yu
    2009 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-3, 2009, : 417 - +
  • [37] Design of class-E power amplifier for zero-current switching operation with MOSFET nonlinear output parasitic capacitance
    Hayati, Mohsen
    Lotfi, Ali
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2014, 56 (04) : 801 - 808
  • [38] Hybrid EER transmitter using Highly Efficient Saturated Power Amplifier for 802.16e Mobile WiMAX application
    Kim, Ildu
    Kim, Jangheon
    Moon, Junghwan
    Kim, Jungjoon
    Woo, Young Yun
    Kim, Bumman
    2009 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-3, 2009, : 1385 - +
  • [39] A class-E power amplifier with high efficiency and high power-gain for wireless sensor network
    Raja, R.
    Theegala, Ramesh
    Venkataramani, B.
    MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, 2017, 23 (09): : 4179 - 4193
  • [40] A class-E power amplifier with high efficiency and high power-gain for wireless sensor network
    R. Raja
    Ramesh Theegala
    B. Venkataramani
    Microsystem Technologies, 2017, 23 : 4179 - 4193
12345