Improvement in breakdown characteristics with multiguard structures in microstrip silicon detectors for CMS

被引：14
|
作者：
Bacchetta, N
Bisello, D
Candelori, A
Da Rold, M
Descovich, M
Kaminski, A
Messineo, A
Rizzo, F
Verzellesi, G
机构：
[1] Ist Nazl Fis Nucl, Sez Padova, I-35131 Padua, Italy
[2] Univ Padua, Dipartimento Fis, I-35100 Padua, Italy
[3] Univ Pisa, Dipartimento Fis, I-56100 Pisa, Italy
[4] Ist Nazl Fis Nucl, Sez Pisa, Pisa, Italy
[5] Univ Trent, Dipartimento Ingn Mat, Povo, TN USA
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2001年 / 461卷 / 1-3期
关键词：
pn junctions; neutron radiation effects; semiconductors; tracking; position sensitive detectors;
D O I：
10.1016/S0168-9002(00)01207-9
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
To obtain full charge collection the CMS silicon detectors should be able to operate at high bias voltage. We observed that multiguard structures enhance the breakdown performance of the devices on several tens of baby detectors designed for CMS. The beneficial effects of the multiguard structures still remains after the strong neutron irradiation performed to simulate the operation at the LHC. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：204 / 206
页数：3
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