A new method for determination of PAD capacitances for GaAs HBTs based on scalable small signal equivalent circuit model

被引：12
|
作者：
Zhang, Ao [1 ]
Gao, Jianjun [1 ]
机构：
[1] East China Normal Univ, Sch Informat & Sci Technol, 500 Dong Chuan Rd, Shanghai, Peoples R China
来源：
SOLID-STATE ELECTRONICS | 2018年 / 150卷
基金：
中国国家自然科学基金;
关键词：
HBT; Equivalent circuits; Parameter extraction; Small signal model; Scalable model; HETEROJUNCTION BIPOLAR-TRANSISTORS; DIRECT EXTRACTION; PARAMETER-EXTRACTION; INP/INGAAS HBTS;
D O I：
10.1016/j.sse.2018.10.005
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new direct extraction method to determine the parasitic capacitances for HBTs is presented in this paper. The main advantage is that base parasitic capacitance Cpb can be extracted by using three different size HBTs with the same pad profile. This method is based on an improved small-signal model, which takes into account the distribution effects of the base and collector feedlines. Good agreement is obtained between the measured and modeled results for the 1 x 3 x 12 mu m(2), 2 x 2 x 20 mu m(2) and 1 x 3 x 40 mu m(2) (number of emitter fingers x emitter width x emitter length) GaAs HBTs up to 40 GHz.
引用
收藏
页码：45 / 50
页数：6
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