Intrinsic stability of an HBT based on a small signal equivalent circuit model

被引：0
|
作者：
陈延湖 [1 ]
申华军 [2 ]
刘新宇 [2 ]
李惠军 [1 ]
徐辉 [1 ]
李玲 [1 ]
机构：
[1] School of Information Science and Engineering,Shandong University
[2] Institute of Microelectronics,Chinese Academy of Sciences
来源：
Journal of Semiconductors | 2010年 / 31卷 / 12期
关键词：
HBT; intrinsic stability; stability factor; small signal equivalent circuit model;
D O I：
暂无
中图分类号：
TN322.8 [];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ;
摘要：
Intrinsic stability of the heterojunction bipolar transistor(HBT) was analyzed and discussed based on a small signal equivalent circuit model.The stability factor of the HBT device was derived based on a compact T-type small signal equivalent circuit model of the HBT.The effect of the mainly small signal model parameters of the HBT on the stability of the HBT was thoroughly examined.The discipline of parameter optimum to improve the intrinsic stability of the HBT was achieved.The theoretic analysis results of the stability were also used to explain the experimental results of the stability of the HBT and they were verified by the experimental results.
引用
收藏
页码：66 / 69
页数：4
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