Conciliating surface superhydrophobicities and mechanical strength of porous silicon films

被引:11
|
作者
Wang, Fuguo [1 ,2 ]
Zhao, Kun [3 ]
Cheng, Jinchun [1 ]
Zhang, Junyan [1 ]
机构
[1] Chinese Acad Sci, Lanzhou Inst Chem Phys, State Key Lab Solid Lubricat, Lanzhou 730000, Peoples R China
[2] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
[3] Lanzhou Univ Technol, Coll Petrochem Technol, Lanzhou 730050, Peoples R China
基金
中国国家自然科学基金;
关键词
Superhydrophobic surfaces; Porous silicon; Mechanical properties; ADHESION;
D O I
10.1016/j.apsusc.2010.10.056
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Hydrophobic surfaces on Mechanical stable macroporous silicon films were prepared by electrochemical etching with subsequent octadecyltrichlorosilane (OTS) modification. The surface morphologies were controlled by current densities and the mechanical properties were adjusted by their corresponding porosities. Contrast with the smooth macroporous silicon films with lower porosities (34.1%) and microporous silicon with higher porosities (97%), the macroporous film with a rough three-dimension (3D) surface and a moderate pore to cross-section area ratio (37.8%, PSi2') exhibited both good mechanical strength (Yong' modulus, shear modulus and collapse strength are 64.2, 24.1 and 0.32 GPa, respectively) and surface superhydrophobicity (water contact angle is 158.4 +/- 2 degrees and sliding angle is 2.7 +/- 1 degrees). This result revealed that the surface hydrophobicities (or the surface roughness) and mechanical strength of porous films could be conciliated by pore to cross-section area ratios control and 3D structures construction. Thus, the superhydrophobic surfaces on mechanical stable porous films could be obtained by 3D structures fabrication on porous film with proper pore to cross-section area ratios. (C) 2010 Elsevier B. V. All rights reserved.
引用
收藏
页码:2752 / 2755
页数:4
相关论文
共 50 条
  • [41] Study of the Mechanical Strength of Thin Silicon Wafers in the Dependence on Their Surface Treatment during Thinning
    V. A. Kozlov
    V. I. Nikolaev
    V. V. Shpeizman
    R. B. Timashov
    A. O. Pozdnyakov
    S. I. Stepanov
    Technical Physics Letters, 2023, 49 : S204 - S207
  • [42] Study of the Mechanical Strength of Thin Silicon Wafers in the Dependence on Their Surface Treatment during Thinning
    Kozlov, V. A.
    Nikolaev, V. I.
    Shpeizman, V. V.
    Timashov, R. B.
    Pozdnyakov, A. O.
    Stepanov, S. I.
    TECHNICAL PHYSICS LETTERS, 2023, 49 (SUPPL 3) : S204 - S207
  • [43] Specimen size effect on tensile strength of surface micromachined polycrystalline silicon thin films
    Tsuchiya, T
    Tabata, O
    Sakata, J
    Taga, Y
    MEMS 97, PROCEEDINGS - IEEE THE TENTH ANNUAL INTERNATIONAL WORKSHOP ON MICRO ELECTRO MECHANICAL SYSTEMS: AN INVESTIGATION OF MICRO STRUCTURES, SENSORS, ACTUATORS, MACHINES AND ROBOTS, 1997, : 529 - 534
  • [44] Texturing the surface of silicon photoelectric converters with porous silicon
    Gaziev, U.Kh.
    Dzhanklych, M.U.
    Dyskin, V.G.
    Muminov, R.A.
    Settarova, Z.S.
    Tursunov, M.N.
    Geliotekhnika, 2002, (03): : 81 - 85
  • [45] Porous surface silicon layers in silicon solar cells
    Panek, P
    Dutkiewicz, J
    Lévy-Clément, C
    Lipinski, M
    Bielanska, E
    Wodnicka, K
    ARCHIVES OF METALLURGY AND MATERIALS, 2005, 50 (02) : 417 - 421
  • [46] The epitaxy of silicon and germanium-silicon films on porous Si
    Gutakovsky, AK
    Romanov, SI
    Pchelyakov, OP
    Mashanov, VI
    Sokolov, LV
    Larichkin, IV
    IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA, 1999, 63 (02): : 255 - 261
  • [47] PHOTOLUMINESCENCE STUDIES OF POROUS SILICON AND SILICON-HYDROGEN FILMS
    ASTROVA, EV
    BELOV, SV
    LEBEDEV, AA
    REMENYUK, AD
    RUD, YV
    VITMAN, RF
    KAPITONOVA, LM
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1994, 145 (02): : 407 - 413
  • [48] SURFACE REACTIVITY OF LUMINESCENT POROUS SILICON
    COFFER, JL
    LILLEY, SC
    MARTIN, RA
    FILESSESLER, LA
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (03) : 2094 - 2096
  • [49] CHEMICAL SURFACE MODIFICATION OF POROUS SILICON
    ANDERSON, RC
    MULLER, RS
    TOBIAS, CW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (05) : 1393 - 1396
  • [50] Thickness of the surface layer of porous silicon
    Yurov, V. M.
    RECENT CONTRIBUTIONS TO PHYSICS, 2020, 72 (01): : 60 - 66