Conciliating surface superhydrophobicities and mechanical strength of porous silicon films

被引:11
|
作者
Wang, Fuguo [1 ,2 ]
Zhao, Kun [3 ]
Cheng, Jinchun [1 ]
Zhang, Junyan [1 ]
机构
[1] Chinese Acad Sci, Lanzhou Inst Chem Phys, State Key Lab Solid Lubricat, Lanzhou 730000, Peoples R China
[2] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
[3] Lanzhou Univ Technol, Coll Petrochem Technol, Lanzhou 730050, Peoples R China
基金
中国国家自然科学基金;
关键词
Superhydrophobic surfaces; Porous silicon; Mechanical properties; ADHESION;
D O I
10.1016/j.apsusc.2010.10.056
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Hydrophobic surfaces on Mechanical stable macroporous silicon films were prepared by electrochemical etching with subsequent octadecyltrichlorosilane (OTS) modification. The surface morphologies were controlled by current densities and the mechanical properties were adjusted by their corresponding porosities. Contrast with the smooth macroporous silicon films with lower porosities (34.1%) and microporous silicon with higher porosities (97%), the macroporous film with a rough three-dimension (3D) surface and a moderate pore to cross-section area ratio (37.8%, PSi2') exhibited both good mechanical strength (Yong' modulus, shear modulus and collapse strength are 64.2, 24.1 and 0.32 GPa, respectively) and surface superhydrophobicity (water contact angle is 158.4 +/- 2 degrees and sliding angle is 2.7 +/- 1 degrees). This result revealed that the surface hydrophobicities (or the surface roughness) and mechanical strength of porous films could be conciliated by pore to cross-section area ratios control and 3D structures construction. Thus, the superhydrophobic surfaces on mechanical stable porous films could be obtained by 3D structures fabrication on porous film with proper pore to cross-section area ratios. (C) 2010 Elsevier B. V. All rights reserved.
引用
收藏
页码:2752 / 2755
页数:4
相关论文
共 50 条
  • [31] ABOUT MECHANICAL STRENGTH OF POROUS MATERIALS
    Ciobanu, Petru
    INTERNATIONAL CONGRESS ON ADVANCES IN APPLIED PHYSICS AND MATERIALS SCIENCE, 2011, 1400 : 453 - 459
  • [32] Microhardness of porous silicon films and composites
    Duttagupta, SP
    Chen, XL
    Jenekhe, SA
    Fauchet, PM
    SOLID STATE COMMUNICATIONS, 1997, 101 (01) : 33 - 37
  • [33] On the photoluminescence decay in porous silicon films
    Baltog, I
    Ciurea, ML
    Pavelescu, G
    Mihut, L
    Baibarac, M
    FIFTH CONFERENCE ON OPTICS (ROMOPTO '97), PTS 1 AND 2, 1998, 3405 : 623 - 626
  • [34] PROPERTIES OF ULTRATHIN FILMS OF POROUS SILICON
    VONBEHREN, J
    UCER, KB
    TSYBESKOV, L
    VANDYSHEV, JV
    FAUCHET, PM
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (03): : 1225 - 1229
  • [35] Adsorption of surfactants in porous silicon films
    Bjorklund, RB
    Zangooie, S
    Arwin, H
    LANGMUIR, 1997, 13 (06) : 1440 - 1445
  • [36] Tuning the cathodoluminescence of porous silicon films
    Biaggi-Labiosa, A.
    Fonseca, L. F.
    Resto, O.
    Balberg, I.
    JOURNAL OF LUMINESCENCE, 2008, 128 (03) : 321 - 327
  • [37] Role of surface texturization in the formation of highly luminescent, stable and thick porous silicon films
    Sharma, SN
    Bhagavannarayana, G
    Sharma, RK
    Lakshmikumar, ST
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2006, 127 (2-3): : 255 - 260
  • [38] Role of surface texturization on the gas-sensing properties of nanostructured porous silicon films
    Sharma, Shailesh N.
    Bhagavannarayana, G.
    Kumar, Umesh
    Debnath, R.
    Mohan, S. Chandra
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2007, 36 (01): : 65 - 72
  • [39] Porosity dependence of the velocity of surface and bulk acoustic waves in porous silicon carbide films
    Young, C. K.
    Andrews, G. T.
    Clouter, M. J.
    Ke, Y.
    Choyke, W. J.
    Devaty, R. P.
    SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 : 745 - +
  • [40] Surface passivation of porous silicon by SiOx and Al2O3 films
    Liu, Xiaobing
    Xiong, Zuhong
    Shi, Xianghua
    Yuan, Shuai
    Liao, Liangsheng
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2000, 21 (01): : 38 - 43