Modelling of thin-film transistors in a polycrystalline silicon layer with large grains

被引：0

作者：

Spiekerman, AJG ^{[1
]}

van Dijk, BD ^{[1
]}

Ishihara, R ^{[1
]}

机构：

[1] Delft Univ Technol, Dept Elect Engn, Fac Informat Technol & Syst, Lab Elect Components Technol & Mat,DIMES, NL-2628 CD Delft, Netherlands

来源：

PROCEEDINGS OF THE FOURTH SYMPOSIUM ON THIN FILM TRANSISTOR TECHNOLOGIES | 1999年 / 98卷 / 22期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

When modelling a Thin-Film Transistor (TFT) in a targe grain polycrystalline silicon layer, the Density of States (DOS) may not be averaged over the grains and grain-boundaries. Here a TFT model is presented where the gl ain-boundaries al-e introduced as narrow areas. The DOS are present only in the boundaries between the grains. The grains are supposed to have mono-crystalline properties. The influence of the Value of the DOS, the position and the number of grain-boundaries on the TFT characteristics has been systematically investigated..

引用

页码：249 / 255

页数：7

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