Modelling of thin-film transistors in a polycrystalline silicon layer with large grains

被引：0
|
作者：
Spiekerman, AJG [1 ]
van Dijk, BD [1 ]
Ishihara, R [1 ]
机构：
[1] Delft Univ Technol, Dept Elect Engn, Fac Informat Technol & Syst, Lab Elect Components Technol & Mat,DIMES, NL-2628 CD Delft, Netherlands
来源：
PROCEEDINGS OF THE FOURTH SYMPOSIUM ON THIN FILM TRANSISTOR TECHNOLOGIES | 1999年 / 98卷 / 22期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
When modelling a Thin-Film Transistor (TFT) in a targe grain polycrystalline silicon layer, the Density of States (DOS) may not be averaged over the grains and grain-boundaries. Here a TFT model is presented where the gl ain-boundaries al-e introduced as narrow areas. The DOS are present only in the boundaries between the grains. The grains are supposed to have mono-crystalline properties. The influence of the Value of the DOS, the position and the number of grain-boundaries on the TFT characteristics has been systematically investigated..
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页码：249 / 255
页数：7
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