Design and control of critical properties of low-k dielectrics for nanoscale interconnects

被引:0
|
作者
Zhou, H [1 ]
Shi, FG [1 ]
Zhao, B [1 ]
机构
[1] Univ Calif Irvine, Henry Samueli Sch Engn, Irvine, CA 92697 USA
来源
2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS | 2004年
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
As integrated circuits (IC) evolve to the generations of nanometer-scale feature size, the thermal, electrical, mechanical and structural properties of the materials used for IC can be very different from those at micrometer or sub-micrometer scale. These changes have very dramatic impacts on the design and fabrication of future high performance IC. This paper presents how thermal, dielectric, and electrical properties of low dielectric constant (low-k) materials change as the interconnect dielectric layer is scaled down to the inn range. The study is focused on carbon-doped PECVD silicon oxide, a widely used low-k material in IC manufacturing.
引用
收藏
页码:497 / 502
页数:6
相关论文
共 50 条
  • [41] Copper dual Damascene interconnects with very low-k dielectrics targeting for 130 nm node
    Kudo, H
    Yoshie, K
    Yamaguchi, S
    Watanabe, K
    Ikeda, M
    Kakamu, K
    Hosoda, T
    Ohhira, K
    Santoh, N
    Misawa, N
    Matsuno, K
    Wakasugi, Y
    Hasegawa, A
    Nagase, K
    Suzuki, T
    PROCEEDINGS OF THE IEEE 2000 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2000, : 270 - 272
  • [42] Extraction of effective dielectric constants and the effect of process damage of low-k dielectrics for advanced interconnects
    Cheng, Y. L.
    Wang, Y. L.
    Chen, H. C.
    THIN SOLID FILMS, 2006, 515 (03) : 1203 - 1205
  • [43] Electrical and reliability characterization of CuMn self forming barrier interconnects on low-k CDO dielectrics
    Indukuri, Tejaswi K.
    Akolkar, Rohan N.
    Clarke, James S.
    Genc, Arda
    Gstrein, Florian
    Harmes, Michael C.
    Miner, Barbara
    Xia, Feng
    Zierath, Daniel J.
    Balakrishnan, Sridhar
    MICROELECTRONIC ENGINEERING, 2012, 92 : 49 - 52
  • [44] Design and Development of Novel Remover for Cu/porous Low-k Interconnects
    Suzuki, Tomoko
    Otake, Atsushi
    Aoki, Tomoko
    ULTRA CLEAN PROCESSING OF SEMICONDUCTOR SURFACES IX, 2009, 145-146 : 315 - 318
  • [45] Effect of terminal methyl group concentration on critical properties and plasma resistance of organosilicate low-k dielectrics
    Rezvanov, Askar A.
    Miakonkikh, Andrey V.
    Seregin, Dmitry S.
    Vishnevskiy, Alexey S.
    Vorotilov, Konstantin A.
    Rudenko, Konstantin V.
    Baklanov, Mikhail R.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2020, 38 (03):
  • [46] Mechanical properties and fracture mechanism of porous SiOCH low-k dielectrics
    Chang, H. L.
    Kuo, C. T.
    Liang, M. S.
    MICROELECTRONIC ENGINEERING, 2011, 88 (07) : 1623 - 1627
  • [47] Cu/Low-k TDDB degradation using ultra low-k (ULK) dielectrics
    Miura, Noriko
    Goto, Kinya
    Hashii, Shinobu
    Suzumura, Naohito
    Miyazaki, Hiroshi
    Matsumoto, Masahiro
    Matsuura, Masazumi
    Asai, Koyu
    ADVANCED METALLIZATION CONFERENCE 2006 (AMC 2006), 2007, : 481 - 487
  • [48] Probing effects of etching plasmas on the properties of porous low-k dielectrics
    Wang, L
    Liu, J
    Wang, WD
    Chi, DZ
    Gidley, DW
    Yee, AF
    MATERIALS, TECHNOLOGY AND RELIABILITY FOR ADVANCED INTERCONNECTS AND LOW-K DIELECTRICS-2004, 2004, 812 : 91 - 96
  • [49] Dielectric reliability in copper low-k interconnects
    Tökei, Z
    Li, YL
    Van Aelst, J
    Beyer, GP
    ADVANCED METALLIZATION CONFERENCE 2005 (AMC 2005), 2006, : 687 - 693
  • [50] Temperature rise in low-k ULSI interconnects
    Zhou, J
    Ruan, G
    Xiao, X
    Huang, YP
    Lee, HD
    2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS, 2004, : 524 - 527