Photoluminescence in semiconductor quantum dots: Enhanced probablities of phonon-assisted transitions

被引:0
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作者
Gladilin, VN [1 ]
Balaban, SN [1 ]
Fomin, VM [1 ]
Devreese, JT [1 ]
机构
[1] Univ Instelling Antwerp, B-2610 Wilrijk, Belgium
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A theory of photoluminescence in semiconductor quantum dots is developed which takes into account non-adiabaticity of the exciton-phonon system. The role of non-adiabaticity is shown to be of paramount importance in spherical quantum dots, where the lowest one-exciton state can be degenerate or quasi-degenerate. In quantum dots of lower symmetry, the effects of non-adiabaticity reveal themselves mainly due to the phonon-induced mixing of states, which belong to different energy levels. We show that the proposed non-adiabatic treatment of phonon-assisted optical transitions can provide an explanation for the remarkably high intensities of phonon satellites observed in the photoluminescence spectra of various quantum-dot structures.
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页码:1243 / 1244
页数:2
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