Evidence of Phonon-Assisted Auger Recombination and Multiple Exciton Generation in Semiconductor Quantum Dots Revealed by Temperature-Dependent Phonon Dynamics

被引:22
|
作者
Hyeon-Deuk, Kim [1 ,2 ]
Kobayashi, Yoichi [3 ]
Tamai, Naoto [4 ]
机构
[1] Kyoto Univ, Dept Chem, Kyoto 6068502, Japan
[2] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan
[3] Aoyama Gakuin Univ, Dept Chem, Chuo Ku, Sagamihara, Kanagawa 2525258, Japan
[4] Kwansei Gakuin Univ, Sch Sci & Technol, Dept Chem, Sanda, Hyogo 6691337, Japan
来源
基金
日本学术振兴会;
关键词
CARRIER MULTIPLICATION; AB-INITIO; MULTIEXCITON GENERATION; COLLOIDAL PBSE; CDSE; NANOCRYSTALS; SPECTROSCOPY; EFFICIENCY; ENERGY; SIZE;
D O I
10.1021/jz402305r
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Auger processes, multiple exciton generation, and Auger recombination, provide and disturb a potential route to increase solar cell efficiencies by creating multiple charge carriers, respectively. Physical mechanisms of the Auger processes can be deduced from the temperature dependence. Our real-time ab initio simulation found logarithmic temperature dependence of the Auger rates in semiconductor quantum dots (QDs), which agrees well with the recent experimental observations. This anomalous temperature dependence is not only determined by static electronic structures of the QDs depending on temperature, but also attributed to dynamical electron-phonon couplings, directly demonstrating that the Auger processes are actually induced by the electron-phonon couplings and can be controlled by phonon modes. Our findings suggest that high-frequency and broad phonon modes of a QD including the surface ligands dictate efficient Auger dynamics in a QD.
引用
收藏
页码:99 / 105
页数:7
相关论文
共 49 条
  • [1] PHONON-ASSISTED AUGER RECOMBINATION IN QUANTUM-WELL SEMICONDUCTORS
    HAUG, A
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1990, 51 (04): : 354 - 356
  • [2] Phonon-assisted capture and intradot Auger relaxation in quantum dots
    Ferreira, R
    Bastard, G
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (19) : 2818 - 2820
  • [3] Photoexcited electron and hole dynamics in semiconductor quantum dots: phonon-induced relaxation, multiple exciton generation and recombination
    Hyeon-Deuk, Kim
    [J]. 24TH IUPAP CONFERENCE ON COMPUTATIONAL PHYSICS (IUPAP-CCP 2012), 2013, 454
  • [4] Theory of phonon-assisted intraband transitions in semiconductor quantum dots
    Kuhn, Sandra
    Schulze, Franz
    Richter, Marten
    Knorr, Andreas
    Carmele, Alexander
    [J]. ULTRAFAST PHENOMENA AND NANOPHOTONICS XVI, 2012, 8260
  • [5] Photoexcited electron and hole dynamics in semiconductor quantum dots: phonon-induced relaxation, dephasing, multiple exciton generation and recombination
    Hyeon-Deuk, Kim
    Prezhdo, Oleg V.
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2012, 24 (36)
  • [6] PHONON-ASSISTED AUGER RECOMBINATION IN A QUASI-2-DIMENSIONAL STRUCTURE SEMICONDUCTOR
    TAKESHIMA, M
    [J]. PHYSICAL REVIEW B, 1984, 30 (06): : 3302 - 3308
  • [7] Phonon-assisted exciton spin relaxation in (In,Ga)As/GaAs quantum dots
    Kurtze, H.
    Yakovlev, D. R.
    Reuter, D.
    Wieck, A. D.
    Bayer, M.
    [J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 4, 2011, 8 (04): : 1165 - 1168
  • [8] Temperature effects on exciton-phonon coupling and Auger recombination in CdTe/ZnTe quantum dots
    Minh Tan Man
    Lee, Hong Seok
    [J]. CURRENT APPLIED PHYSICS, 2014, 14 : S107 - S110
  • [9] Quantum theory of phonon-assisted exciton formation and luminescence in semiconductor quantum wells
    Thränhardt, A
    Kuckenburg, S
    Knorr, A
    Meier, T
    Koch, SW
    [J]. PHYSICAL REVIEW B, 2000, 62 (04) : 2706 - 2720
  • [10] Enhanced probabilities of phonon-assisted optical transitions in semiconductor quantum dots
    Devreese, JT
    Fomin, VM
    Gladilin, VN
    Pokatilov, EP
    Klimin, SN
    [J]. NANOTECHNOLOGY, 2002, 13 (02) : 163 - 168