Current-Induced Magnetization Switching of CoFeB/Ta/[Co/Pd (Pt)]-Multilayers in Magnetic Tunnel Junctions With Perpendicular Anisotropy

被引：6
|
作者：
Ishikawa, Shinya [1 ]
Enobio, Eli C. I. [1 ]
Sato, Hideo [2 ,3 ]
Fukami, Shunsuke [2 ,3 ]
Matsukura, Fumihiro [1 ,2 ,4 ]
Ohno, Hideo [1 ,2 ,3 ,4 ]
机构：
[1] Tohoku Univ, Elect Commun Res Inst, Lab Nanoelect & Spintron, Sendai, Miyagi 9808577, Japan
[2] Tohoku Univ, Ctr Spintron Integrated Syst, Sendai, Miyagi 9808577, Japan
[3] Tohoku Univ, Ctr Innovat Integrated Elect Syst, Sendai, Miyagi 9800845, Japan
[4] Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan
来源：
IEEE TRANSACTIONS ON MAGNETICS | 2016年 / 52卷 / 07期
关键词：
Magnetic tunnel junction (MTJ); multilayer; perpendicular magnetic anisotropy; spintronics;
D O I：
10.1109/TMAG.2016.2517098
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigate magnetic properties of CoFeB/Ta/[Co/Pd (Pt)] multilayers and properties of magnetic tunnel junctions (MTJs) with the structures as a recording layer. CoFeB/Ta/[Co/Pd] multilayer shows a lower damping constant a than that of CoFeB/Ta/[Co/Pt] multilayer. We evaluate current-induced magnetization switching (CIMS) properties of the MTJs with CoFeB/Ta/[Co/Pd (Pt)] multilayers with the junction diameter of 15 (13) nm that show similar thermal stability factor. CIMS is observed for the MTJ with a CoFeB/Ta/[Co/Pd] multilayer at zero magnetic field, whereas it is observed for the MTJ with the CoFeB/Ta/[Co/Pt] multilayer only in the presence of an external field.
引用
收藏
页数：4
相关论文
共 50 条
  • [41] Current-induced switching in low resistance magnetic tunnel junctions
    Liu, YW
    Zhang, ZZ
    Wang, JG
    Freitas, PP
    Martins, JL
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (10) : 8385 - 8387
  • [42] Perpendicular magnetic anisotropy in the CoFeB/Pt multilayers by anomalous Hall effect
    Na, Liu
    Hai, Wang
    Tao, Zhu
    ACTA PHYSICA SINICA, 2012, 61 (16)
  • [43] Current-induced switching in low resistance magnetic tunnel junctions
    Liu, Y. (yaowen@aquario.inesc.pt), 1600, American Institute of Physics Inc. (93):
  • [44] Current-Induced Magnetization Switching in Seed Optimized Perpendicular Magnetic Tunnel Junctions with Enhanced Spin-Transfer-Torque Efficiency and Uniformity
    Sun, Yihui
    Gong, Junlu
    Deng, Zhixiao
    Chen, Ruofei
    Meng, Fantao
    ACS APPLIED ELECTRONIC MATERIALS, 2021, 3 (09) : 3754 - 3760
  • [45] Effect of Ta thickness on the perpendicular magnetic anisotropy in MgO/CoFeB/Ta/[Co/Pd]n structures
    Chang, Yao-Jen
    Canizo-Cabrera, A.
    Garcia-Vazquez, Valentin
    Chang, Yang-Hua
    Wu, Te-ho
    JOURNAL OF APPLIED PHYSICS, 2013, 114 (18)
  • [46] Effect of Ta thickness on the perpendicular magnetic anisotropy in MgO/CoFeB/Ta/[Co/Pd]n structures
    1600, American Institute of Physics Inc. (114):
  • [47] Switching phase diagrams of current-induced magnetization switching in asymmetric MgO-based magnetic tunnel junctions
    Park, Seung-Young
    Han, Jae-Ho
    Oh, Se-Chung
    Lee, Jang-Eun
    Nam, Kyung-Tae
    Lee, Hyun-Woo
    Jo, Younghun
    Lee, Kyung-Jin
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 44 (06)
  • [48] Perpendicular magnetic anisotropy and the magnetization process in CoFeB/Pd multilayer films
    Duc-The Ngo
    Duy-Truong Quach
    Quang-Hung Tran
    Molhave, Kristian
    The-Long Phan
    Kim, Dong-Hyun
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2014, 47 (44)
  • [49] Effect of annealing conditions on the perpendicular magnetic anisotropy of Ta/CoFeB/MgO multilayers
    Liu, Yan
    Hao, Liang
    Cao, Jiangwei
    AIP ADVANCES, 2016, 6 (04):
  • [50] Current-induced magnetization reversal in nanopillars with perpendicular anisotropy
    S. Mangin
    D. Ravelosona
    J. A. Katine
    M. J. Carey
    B. D. Terris
    Eric E. Fullerton
    Nature Materials, 2006, 5 : 210 - 215
12345