Switching phase diagrams of current-induced magnetization switching in asymmetric MgO-based magnetic tunnel junctions

被引：4

作者：

Park, Seung-Young ^{[1
]}

Han, Jae-Ho ^{[2
]}

Oh, Se-Chung ^{[3
]}

Lee, Jang-Eun ^{[3
]}

Nam, Kyung-Tae ^{[3
]}

Lee, Hyun-Woo ^{[2
]}

Jo, Younghun ^{[1
]}

Lee, Kyung-Jin ^{[4
]}

机构：

[1] Korea Basic Sci Inst, Div Mat Sci, Taejon 305333, South Korea

[2] Pohang Univ Sci & Technol, Dept Phys, Pohang 790784, Kyungbuk, South Korea

[3] Samsung Elect Co Ltd, Semicond R&D Ctr, Gyeonggi Do 445701, South Korea

[4] Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South Korea

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2011年 / 44卷 / 06期

关键词：

SPIN-TRANSFER-TORQUE; VOLTAGE-DEPENDENCE; DOMAIN-WALL; DRIVEN; EXCITATIONS; MULTILAYERS; TRANSPORT; SYSTEMS; WAVES; FILMS;

D O I：

10.1088/0022-3727/44/6/064008

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the effect of the free-layer composition and the pattern size of magnetic cell on current-induced magnetization switching in asymmetric MgO-based magnetic tunnel junctions. We found that the normalized switching phase diagrams (SPDs) measured at low temperature are mostly determined by the material composition of ferromagnetic electrodes but are not much sensitive to the intrinsic energy barrier and the anisotropy field of the sample. This experimental result indicates that the normalized SPD can be used to study the fundamental characteristics of spin-transfer torque.

引用

页数：6

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