Current paths over grain boundaries in polycrystalline silicon films

被引：8
|
作者：
Kimura, M
Inoue, S
Shimoda, T
Sameshima, T
机构：
[1] Epson Corp, Base Technol Res Ctr, Nagano 3990293, Japan
[2] Tokyo Univ Agr & Technol, Div Elect & Informat Engn, Koganei, Tokyo 1848588, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2001年 / 40卷 / 2A期
关键词：
current path; grain boundary; polycrystalline silicon; film; simulation; winding; perpendicularity;
D O I：
10.1143/JJAP.40.L97
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Current paths over grain boundaries in polycrystalline silicon films have been analyzed using two-dimensional simulations. It is found that the current path is winding and longer than the distance between the electrodes. It is also found that the current path tends to how perpendicular to the grain boundary and avoids the vertex of the grains. The reason why the current path tends to Row perpendicular to the grain boundary can also be explained using an analytical method.
引用
收藏
页码：L97 / L99
页数：3
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