Current paths over grain boundaries in polycrystalline silicon films

被引：8
|
作者：
Kimura, M
Inoue, S
Shimoda, T
Sameshima, T
机构：
[1] Epson Corp, Base Technol Res Ctr, Nagano 3990293, Japan
[2] Tokyo Univ Agr & Technol, Div Elect & Informat Engn, Koganei, Tokyo 1848588, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2001年 / 40卷 / 2A期
关键词：
current path; grain boundary; polycrystalline silicon; film; simulation; winding; perpendicularity;
D O I：
10.1143/JJAP.40.L97
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Current paths over grain boundaries in polycrystalline silicon films have been analyzed using two-dimensional simulations. It is found that the current path is winding and longer than the distance between the electrodes. It is also found that the current path tends to how perpendicular to the grain boundary and avoids the vertex of the grains. The reason why the current path tends to Row perpendicular to the grain boundary can also be explained using an analytical method.
引用
收藏
页码：L97 / L99
页数：3
相关论文
共 50 条
  • [31] ELECTRONIC-PROPERTIES OF GRAIN-BOUNDARIES IN POLYCRYSTALLINE SILICON
    YANG, ES
    POON, E
    EVANS, HL
    HWANG, W
    SONG, JS
    WU, CM
    PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1983, 385 : 59 - 64
  • [32] BARRIER HEIGHTS AND PASSIVATION OF GRAIN-BOUNDARIES IN POLYCRYSTALLINE SILICON
    SEAGER, CH
    GINLEY, DS
    SOLAR CELLS, 1980, 1 (03): : 293 - 296
  • [33] MODIFICATION OF GRAIN-BOUNDARIES IN POLYCRYSTALLINE SILICON WITH FLUORINE AND OXYGEN
    GINLEY, DS
    APPLIED PHYSICS LETTERS, 1981, 39 (08) : 624 - 626
  • [34] ELECTRONIC-PROPERTIES OF GRAIN-BOUNDARIES IN POLYCRYSTALLINE SILICON
    OUALID, J
    AMZIL, H
    CREST, JP
    DUGAS, J
    MATHIAN, G
    ZEHAF, M
    MARTINUZZI, S
    JOURNAL DE PHYSIQUE, 1982, 43 (NC1): : 313 - 318
  • [35] Recombination properties of grain boundaries in polycrystalline silicon under illumination
    Meng, FY
    Sun, TT
    Cui, RQ
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2000, 15 (09) : 926 - 930
  • [36] EFFECTS OF GRAIN-BOUNDARIES ON THE CURRENT-VOLTAGE CHARACTERISTICS OF POLYCRYSTALLINE SILICON SOLAR-CELLS
    NEUGROSCHEL, A
    MAZER, JA
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (02) : 225 - 236
  • [37] GROWTH OF POLYCRYSTALLINE SILICON FILMS - GRAIN-SIZE
    EMMANUEL, A
    POLLOCK, HM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) : 1586 - 1591
  • [38] ELECTRONIC-STRUCTURE AND PASSIVATION OF GRAIN-BOUNDARIES IN POLYCRYSTALLINE SILICON
    SEAGER, CH
    PIKE, GE
    GINLEY, DS
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C112 - C112
  • [39] Impurity thermovoltaic effect in the grain boundaries of a polycrystalline silicon solar cell
    Saidov M.S.
    Abdurakhmanov B.M.
    Olimov L.O.
    Applied Solar Energy, 2007, 43 (4) : 203 - 206
  • [40] RECOMBINATION EFFECTS AND IMPURITY SEGREGATION AT GRAIN-BOUNDARIES IN POLYCRYSTALLINE SILICON
    PIZZINI, S
    SANDRINELLI, A
    BEGHI, M
    NARDUCCI, D
    FABBRI, PL
    REVUE DE PHYSIQUE APPLIQUEE, 1987, 22 (07): : 631 - 636
12345