Reticle defects on optical proximity correction features

被引：1
|
作者：
Zurbrick, LS [1 ]
机构：
[1] KLA Tencor Corp, San Jose, CA 95134 USA
来源：
PHOTOMASK AND X-RAY MASK TECHNOLOGY V | 1998年 / 3412卷
关键词：
defect inspection; optical proximity correction;
D O I：
10.1117/12.328858
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A test mask has been developed and used to characterize automatic defect inspection systems. Characterization was performed on three generations of inspection algorithms and revealed an increase in the detection rate of defects on serifs and jogs with each succeeding algorithm and equipment generation.
引用
收藏
页码：471 / 479
页数：9
相关论文
共 50 条
  • [1] Reticle defect sizing of optical proximity correction defects using SEM imaging and image analysis techniques
    Zurbrick, L
    Wang, LT
    Konicek, P
    Laird, E
    PHOTOMASK AND NEXT-GENERATION LITHOGRAPHY MASK TECHNOLOGY VII, 2000, 4066 : 368 - 375
  • [2] Proximity effect correction for reticle fabrication
    Sugiyama, M
    Kubo, S
    Hiruta, K
    PHOTOMASK AND NEXT-GENERATION LITHOGRAPHY MASK TECHNOLOGY VII, 2000, 4066 : 180 - 187
  • [3] Proximity effect correction for reticle fabrication
    Kamikubo, T
    Abe, T
    Oogi, S
    Anze, H
    Shimizu, M
    Itoh, M
    Nagasugi, T
    Iijima, N
    Hattori, Y
    PHOTOMASK AND X-RAY MASK TECHNOLOGY IV, 1997, 3096 : 173 - 177
  • [4] Characterization of optical proximity correction features
    Allgair, J
    Ivy, M
    Lucas, K
    Sturtevant, J
    Elliott, R
    Mack, CA
    MacNaughton, C
    Miller, J
    Pochkowski, M
    Preil, M
    Robinson, J
    Santos, F
    METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XV, 2001, 4344 : 200 - 207
  • [5] Effect of reticle manufacturing quality on full chip optical proximity correction.
    Martin, B
    Arthur, G
    LITHOGRAPHY FOR SEMICONDUCTOR MANUFACTURING, 1999, 3741 : 197 - 201
  • [6] Optical proximity correction feature extraction method using reticle scanning electron microscope images
    Ikeda, T
    Miyano, Y
    Kotani, T
    Shibata, T
    Ikenaga, O
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (6B): : 3937 - 3941
  • [7] Optical proximity correction feature extraction method using reticle scanning electron microscope images
    Ikeda, T. (takahiro2.ikeda@toshiba.co.jp), 1600, Japan Society of Applied Physics (42):
  • [8] Effect of reticle CD uniformity on wafer CD uniformity in the presence of scattering bar optical proximity correction
    Adam, K
    Socha, R
    Dusa, M
    Neureuther, A
    18TH ANNUAL SYMPOSIUM ON PHOTOMASK TECHNOLOGY AND MANAGEMENT, 1998, 3546 : 642 - 650
  • [9] Fracture friendly optical proximity correction for non-manhattan features
    Nogatch, John
    Lugg, Robert
    Miller, Mike
    Amoroso, Frank
    PHOTOMASK AND NEXT GENERATION LITHOGRAPHY MASK TECHNOLOGY XIII, PTS 1 AND 2, 2006, 6283
  • [10] Assist features for modeling three-dimensional mask effects in optical proximity correction
    Yan, Qiliang
    Deng, Zhijie
    Shiely, James
    Melvin, Lawrence
    DESIGN FOR MANUFACTURABILITY THROUGH DESIGN-PROCESS INTEGRATION, 2007, 6521
12345