Key aspects on ESD protection design for ICs: Mixed-mode simulation and RF/mixed-signal ESD

被引：0

作者：

Wang, A ^{[1
]}

Feng, H ^{[1
]}

Chen, G ^{[1
]}

Zhan, R ^{[1
]}

Xie, H ^{[1
]}

Wu, Q ^{[1
]}

Guan, X ^{[1
]}

机构：

[1] IIT, Dept ECE, Chicago, IL 60616 USA

来源：

2003 5TH INTERNATIONAL CONFERENCE ON ASIC, VOLS 1 AND 2, PROCEEDINGS | 2003年

关键词：

RF ESD protection; mixed-mode;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper reviews the key aspects in on-chip ESD (electrostatic discharge) protection circuitry design. The mixed-mode ESD Simulation-design methodology is discussed to address the design prediction task. New challenges in ESD protection design for RF/mixed-Signal ICs are discussed that include the complex ESD-circuit interactions, RF ESD protection characterization and hill-chip ESD protection solutions.

引用

页码：1000 / 1005

页数：6

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