Stability of radio-frequency graphene field-effect transistors in ambient

被引：2

作者：

Wang, Zidong ^{[1
]}

Zhang, Qingping ^{[2
]}

Wei, Zijun ^{[1
]}

Peng, Pei ^{[1
]}

Tian, Zhongzheng ^{[1
]}

Ren, Liming ^{[1
]}

Zhang, Xing ^{[1
]}

Huang, Ru ^{[1
]}

Wen, Jincai ^{[2
]}

Fu, Yunyi ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits MOE, Beijing 100871, Peoples R China

[2] Hangzhou Dianzi Univ, Key Lab RF Circuits & Syst MOE, Hangzhou 310018, Zhejiang, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2019年 / 52卷 / 05期

基金：

中国国家自然科学基金;

关键词：

radio-frequency; graphene; field-effect transistor; stability;

D O I：

10.1088/1361-6463/aaef00

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

While many studies on radio-frequency (RF) graphene field-effect transistor (GFET) aimed to study its high performances, explorations of the long-term stability of RF GFETs in atmosphere may be required as well. In this paper, we investigated the stability of the RF GFETs stored in ambient for four years. Both the RF and direct current characteristics are measured and compared with the initial properties. Changes of current-gain cut-off frequency and field-effect mobility, reductions of maximum oscillation frequency, peak transconductance and gate capacitance are observed butthe extracted contact resistance remains unchanged. The permeation of water vapor and oxygen into the thin Al2O3 dielectric, the diffusion of Pd atoms from contact onto the graphene channel and the rougher Al2O3 surface may challenge the stability of RF GFETs. This work may pave the way for the fabrication of more stable RF GFETs, which further serve steady graphene-based RF circuits.

引用

页数：6

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