Normal incidence InAs/InGaAs quantum dots-in-a-well photodetector spanning the 8-12 μm atmospheric window

被引:0
|
作者
Raghavan, S [1 ]
Forman, D [1 ]
Hill, P [1 ]
von Winckel, G [1 ]
Stintz, A [1 ]
Krishna, S [1 ]
机构
[1] Univ New Mexico, Ctr High Technol Mat, ECE Dept, Albuquerque, NM 87106 USA
来源
2003 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 | 2003年
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:921 / 922
页数:2
相关论文
共 50 条
  • [11] Resonant cavity enhanced InAs/In0.15Ga0.85As dots-in-a-well quantum dot infrared photodetector
    Attaluri, R. S.
    Shao, J.
    Posani, K. T.
    Lee, S. J.
    Brown, J. S.
    Stintz, A.
    Krishnaa, S.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2007, 25 (04): : 1186 - 1190
  • [12] Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-Well Mid-Wave Infrared Photodetectors Grown on Silicon Substrate
    Chen, Wei
    Deng, Zhuo
    Guo, Daqian
    Chen, Yaojiang
    Mazur, Yuriy, I
    Maidaniuk, Yurii
    Benamara, Mourad
    Salamo, Gregory J.
    Liu, Huiyun
    Wu, Jiang
    Chen, Baile
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 2018, 36 (13) : 2572 - 2581
  • [13] INGAAS/INP HOLE INTERSUBBAND NORMAL INCIDENCE QUANTUM-WELL INFRARED PHOTODETECTOR
    GUNAPALA, SD
    LEVINE, BF
    RITTER, D
    HAMM, R
    PANISH, MB
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (05) : 2458 - 2460
  • [14] Optimizing the growth of 1.3-μm InAs/InGaAs dots-in-a-well structure:: Achievement of high-performance laser
    Liu, HY
    Sellers, IR
    Gutiérrez, M
    Groom, KM
    Beanland, R
    Soong, WM
    Hopkinson, M
    David, JPR
    Badcock, TJ
    Mowbray, DJ
    Skolnick, MS
    MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2005, 25 (5-8): : 779 - 783
  • [15] Long wavelength transverse magnetic polarized absorption in 1.3 μm InAs/InGaAs dots-in-a-well type active regions
    Crowley, M. T.
    Heck, S. C.
    Healy, S. B.
    Osborne, S.
    Williams, D. P.
    Schulz, S.
    O'Reilly, E. P.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2013, 28 (01)
  • [16] Interband Photoconductivity of Metamorphic InAs/InGaAs Quantum Dots in the 1.3–1.55-μm Window
    Sergii Golovynskyi
    Oleksandr I. Datsenko
    Luca Seravalli
    Giovanna Trevisi
    Paola Frigeri
    Ivan S. Babichuk
    Iuliia Golovynska
    Junle Qu
    Nanoscale Research Letters, 2018, 13
  • [17] Normal incidence InAs/InGaAs dots-in-well detectors with current blocking AlGaAs layer
    Rotella, P
    Raghavan, S
    Stintz, A
    Fuchs, B
    Krishna, S
    Morath, C
    Le, D
    Kennerly, SW
    JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) : 787 - 793
  • [18] InGaAs/InGaAlAs/InAs/InP very selective quantum dot infrared photodetector for 12 μm
    Gebhard, T.
    Souza, P. L.
    Alvarenga, D.
    Parra-Murillo, C. A.
    Guimaraes, P. S. S.
    Unterrainer, K.
    Pires, M. P.
    Vieira, G. S.
    Villas-Boas, J. M.
    Maialle, M. Z.
    Degani, M. H.
    Farinas, P. F.
    Studart, N.
    2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2, 2009, : 170 - +
  • [19] An intermediate-band-assisted avalanche multiplication in InAs/InGaAs quantum dots-in-well infrared photodetector
    Lin, L.
    Zhen, H. L.
    Zhou, X. H.
    Li, N.
    Lu, W.
    Liu, F. Q.
    APPLIED PHYSICS LETTERS, 2011, 98 (07)
  • [20] High sensitivity broadband quantum well infrared photodetector with double/linear-graded barrier for 8-12μm detection
    Lee, JH
    Li, SS
    Tidrow, MZ
    Liu, WK
    ELECTRONICS LETTERS, 2000, 36 (12) : 1058 - 1059