Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-Well Mid-Wave Infrared Photodetectors Grown on Silicon Substrate

被引：35

作者：

Chen, Wei ^{[1
,2
,3
]}

Deng, Zhuo ^{[2
]}

Guo, Daqian ^{[4
]}

Chen, Yaojiang ^{[2
]}

Mazur, Yuriy, I ^{[5
]}

Maidaniuk, Yurii ^{[5
]}

Benamara, Mourad ^{[5
]}

Salamo, Gregory J. ^{[5
]}

Liu, Huiyun ^{[4
]}

Wu, Jiang ^{[4
]}

Chen, Baile ^{[2
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China

[2] ShanghaiTech Univ, Optoelect Device Lab, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China

[3] Univ Chinese Acad Sci, Huairou 101408, Peoples R China

[4] UCL, Dept Elect & Elect Engn, London WC1E 7JE, England

[5] Univ Arkansas, Inst Nanosci & Engn, Fayetteville, AR 72701 USA

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 2018年 / 36卷 / 13期

基金：

美国国家科学基金会; 英国工程与自然科学研究理事会;

关键词：

Infrared photodetector; quantum dots-in-a-well; silicon substrate; DETECTORS; LAYERS;

D O I：

10.1109/JLT.2018.2811388

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we have demonstrated the first InAs/InGaAs/GaAs quantum dots-in-a-well (DWELL) photodetector monolithically grown on silicon substrate. We studied both the optical and electrical characteristics of the DWELL photodetectors. Time-resolved photoluminescence spectra measured from the DWELL photodetector revealed a long carrier lifetime of 1.52 ns. A low dark current density of 2.03 x 10(-3) mA/cm(2) was achieved under 1 V bias at 77 K. The device showed a peak responsivity of 10.9 mA/W under 2 V bias at the wavelength of 6.4 mu m at 77K, and the corresponding detectivity was 5.78 x 10(8) cm.Hz(1/2)/W. These results demonstrated that these silicon-based DWELL photodetectors are very promising for future mid-infrared applications, which can enjoy the potential benefit from mid-infrared silicon photonics technology.

引用

页码：2572 / 2581

页数：10

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