A model to estimate QE/MTF of thinned, back-side illuminated image sensors

被引：3
|
作者：
Ercan, Alper [1 ]
Minoglou, Kyriaki [1 ]
机构：
[1] IMEC, B-3001 Leuven, Belgium
来源：
OPTICAL AND QUANTUM ELECTRONICS | 2015年 / 47卷 / 05期
关键词：
Quantum efficiency; Modulation transfer function; CMOS image sensor; CCD image sensor; BSI; Graded-epi; MODULATION TRANSFER-FUNCTION; CHARGE-COUPLED IMAGERS; CARRIER DIFFUSION; QUANTUM EFFICIENCY; SPATIAL-RESOLUTION; DETECTOR ARRAYS; CMOS IMAGERS; CROSSTALK; SILICON; MTF;
D O I：
10.1007/s11082-014-9989-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An analytical model to estimate the quantum efficiency and the modulation transfer function of image sensors is proposed. Proposed approach follows similar prior studies, and tries to improve them in two directions: first, the impact of internal reflections on the optical generation profile is taken into account; second, the diffusion current calculations are extended for sensors utilizing graded-epi wafers and back-side passivation implants. A back-side illuminated photo diode sensor is used as a case study to demonstrate the model response.
引用
收藏
页码：1267 / 1282
页数：16
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