Dielectric Charging Effects in Electrostatically Actuated CMOS MEMS Resonators

被引：9

作者：

Dorsey, Kristen L. ^{[1
]}

Fedder, Gary K. ^{[2
]}

机构：

[1] Carnegie Mellon Univ, Pittsburgh, PA 15213 USA

[2] Carnegie Mellon Univ, Elect & Comp Engn & Robot Inst, Pittsburgh, PA 15213 USA

来源：

2010 IEEE SENSORS | 2010年

关键词：

D O I：

10.1109/ICSENS.2010.5690413

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Effects of dielectric charging on resonant frequency in an electrostatically actuated MEMS cantilever are experimentally observed over time and with changing bias voltage. Frequency sensitivity to bias of -11 Hz/V arises from non-linearity in the comb electrostatic force when the device is driven at 200 kHz oscillation. Frequency drift of greater than +200 ppm is observed over a 12 hr period when bias switches by more than 12 V. Borrowing from RF MEMS switch charging models, a device model is applied to the cantilever resonator oscillator system. These initial results inform design and compensation methods leading to decreased frequency drift and improved limit of detection for gravimetric sensing applications.

引用

页码：197 / 200

页数：4

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