Proposal of a planar 8F2 1T2C-type ferroelectric memory cell

被引：8

作者：

Yamamoto, S ^{[1
]}

Kim, HS ^{[1
]}

Ishiwara, H ^{[1
]}

机构：

[1] Tokyo Inst Technol, Frontier Collaborat Res Ctr, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2003年 / 42卷 / 4B期

关键词：

ferroelectric random access memory (FeRAM); 1T2C-type ferroelectric memory; memory cell; memory array; highdensity integration; non-destructive data readout; data retention; ferroelectric gate field effect transistor; silicon on insulator (SOI);

D O I：

10.1143/JJAP.42.2059

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A planar IT2C-type ferroelectric memory cell structure which has a unit cell area of 8F(2) (F : minimum feature length) has been proposed. The minimum required area of the proposed cell is half of that of the conventional structure. The basic operation of the proposed cell has been ascertained using simulation program with integrated circuit emphasis (SPICE) simulation in which the on-off ratio of the data "readout" current of about three orders of magnitude is successfully demonstrated.

引用

页码：2059 / 2062

页数：4

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