Weak Localization in Bilayer Graphene: Enhanced Scattering near Dirac Point

被引：0
|
作者：
Lee, Jin Seok [1 ,2 ]
Lee, Sungbae [1 ,2 ]
机构：
[1] Gwangju Inst Sci & Technol, Dept Phys, Gwangju 61005, South Korea
[2] Gwangju Inst Sci & Technol, Dept Photon Sci, Gwangju 61005, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2020年 / 76卷 / 03期
关键词：
Bilayer graphene; Weak (anti-)localization; Inter-; intra-valley scattering;
D O I：
10.3938/jkps.76.247
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The effects of quantum corrections on electron conductivity in bilayer graphene have been studied under various temperatures and gate voltages to seek the origin of the restrictions in electron conductions. Although previous studies suggested the enhanced intervalley scattering effect to be the major reason behind the restriction on electron transport, tested samples in this work exhibited the weak localization effect due to much weaker intervalley scattering rates. The enhancement of inelastic scattering near Dirac point are further tested to show the reason behind the inconsistency. It is successfully shown that the amount of electron-hole puddles, and thus, screening effects could enhance intervalley scattering near Dirac point.
引用
收藏
页码：247 / 250
页数：4
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